Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures
Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures
复制标题
反铁磁异质结构中的单向自旋霍尔磁阻
DOI：
10.1103/physrevlett.130.086703
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发表时间：
2023
影响因子：
8.6
通讯作者：
Wang, Kang L.
中科院分区：
文献类型：
--
作者：
Cheng, Yang;Tang, Junyu;Michel, Justin J.;Chong, Su Kong;Yang, Fengyuan;Cheng, Ran;Wang, Kang L.
单向自旋霍尔磁电阻效应（USMR）在重金属/铁磁双层膜系统中已被广泛报道。我们在反铁磁绝缘层中观察到USMR.系统的场和温度相关的测量证实了磁振子起源的USMR。原子力显微镜-超磁共振的出现是由热随机场引起的自旋轨道力矩导致的原子力显微镜磁振子产生和湮灭的不平衡所驱动的。然而，与其铁磁对应物不同，理论模型表明USMR由反铁磁振子数决定，具有非单调的场依赖性。我们的研究结果扩展了USMR的通用性，为AFM自旋态的高灵敏度检测铺平了道路。
Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal/ferromagnet bilayer systems. We observe the USMR inbilayers where theis an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to the thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR inis determined by the antiferromagtic magnon number with a non-monotonic field dependence. Our findings extend the generality of the USMR which pave the ways for the highly sensitive detection of AFM spin state.