Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBE

Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBE
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MBE 反射高能电子衍射测量砷化镓生长过程中的表面扩散

DOI:
10.1016/0022-0248(87)90357-5
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发表时间:
1987
影响因子:
1.8
通讯作者:
P. Cohen
P. Cohen
中科院分区:
材料科学3区
文献类型:
--
作者:
J. Hove;P. Cohen

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