Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements
Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements
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发表时间：
2012-03
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通讯作者：
M. Winter;J. Baudot;A. Besson;G. Claus;A. Dorokhov;M. Goffe;C. Hu-Guo;F. Morel;I. Valin;G. Voutsinas;Liang Zhang
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作者：
M. Winter;J. Baudot;A. Besson;G. Claus;A. Dorokhov;M. Goffe;C. Hu-Guo;F. Morel;I. Valin;G. Voutsinas;Liang Zhang
CMOS 像素传感器正在朝着 ILD 顶点检测器的规格稳步前进。总结了最近的发展，表明这些设备接近符合所有主要要求，特别是应对光束相关背景所需的读出速度。这一成就基于双面梯子概念，该概念允许将单个粒子在两个不同传感器中产生的信号组合起来，一个专用于空间分辨率，另一个专用于时间戳，两者都组装在同一机械支架上。概述了开发状态以及使用先进 CMOS 工艺完成开发的计划。
CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.