Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth.
Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth.
复制标题
氢等离子体对电子回旋共振化学气相沉积的刻蚀效应及其在低温硅选择性外延生长中的应用。
DOI：
10.1143/jjap.37.402
复制
发表时间：
1998
影响因子：
1.5
通讯作者：
T. Takada
中科院分区：
文献类型：
--
作者：
K. Sasaki;T. Takada
研究了ECR技术产生的H2等离子体对Si的刻蚀特性。腐蚀速率以（111）<（110）<（100）的顺序增加。这种现象是由硅原子的键形成和每个取向的原子层的数量来解释的。硅外延生长的ECR等离子体CVD技术，使用SiH 4-H2气体系统进行了检查。在150°C的衬底温度下，虽然结晶度随着膜厚度的增加而降低，但我们确认了外延生长。适当的氢等离子体刻蚀工艺可以增强硅原子的重排，对低温硅外延生长具有重要意义。在450°C下获得了结晶性良好、表面平整的Si外延薄膜。在衬底温度为150°C时，利用刻蚀速率差对薄膜结晶度的影响，成功地实现了完全选择性外延生长。然而，外延厚度限于约40 nm。当衬底温度高于150°C时，薄膜在SiO2衬底上的多晶化降低了选择性。
Si etching properties by H2 plasma generated using the ECR technique were investigated. The etch rate increases in the order of (111) < (110) < (100). This phenomenon is explained by the bond formation of the Si atoms and the number of the atomic layer for each orientation. Si epitaxial growth was examined by the ECR plasma CVD technique using a SiH4–H2 gas system. At the substrate temperature of 150°C, although the crystallinity degrades with an increase of the film thickness, we confirmed epitaxial growth. An appropriate etching process with H2 plasma, which enhances rearrangement of the Si atoms, is important for Si epitaxial growth at low temperatures. Si epitaxial films with excellent crystallinity and smooth surface morphology as determined by observation of the Kikuchi-lines were obtained at 450°C. Complete selective epitaxial growth was successfully realized at substrate temperature of 150°C by utilizing the etch rate difference for the crystallinity of deposited films. However, the epitaxial thickness was limited to approximately 40 nm. For the substrate temperatures higher than 150°C, the film polycrystallization on an SiO2 substrate degraded the selectivity.