Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes
Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes
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DOI：
10.1063/1.4792235
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发表时间：
2013-02
影响因子：
4
通讯作者：
M. Alam;Zhaokui Wang;S. Naka;H. Okada
中科院分区：
文献类型：
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作者：
M. Alam;Zhaokui Wang;S. Naka;H. Okada
据报道，在顶部接触并五苯基有机薄膜晶体管 (OTFT) 中，通过在 Au 电极和并五苯层之间插入薄 (5 nm) 氧化锗 (GeO) 中间层，可以增强电荷注入和场效应迁移率。与仅使用Au电极的并五苯基OTFT相比，器件性能得到了显着提高，其场效应迁移率最高为0.96 cm2/Vs。这一改进归因于Au/并五苯界面处势垒高度的显着降低以及插入薄GeO层后并五苯层的表面变得光滑。
The enhancement of the charge injection and field effect mobility by inserting a thin (5 nm) germanium oxide (GeO) interlayer between the Au electrode and pentacene layer in a top contact pentacene based organic thin-film transistor (OTFTs) was reported. In comparison with the pentacene-based OTFT with only-Au electrode, the device performance has been considerably improved, which exhibits the highest field effect mobility of 0.96 cm2/Vs. The improvement was attributed to significant reduction of barrier height at Au/pentacene interfaces and smoothed surface of pentacene layer after inserting a thin GeO layer.