Edge-Epitaxial Growth of 2D NbS2-WS2 Lateral Metal-Semiconductor Heterostructures
Edge-Epitaxial Growth of 2D NbS2-WS2 Lateral Metal-Semiconductor Heterostructures
复制标题
二维 NbS2-WS2 横向金属半导体异质结构的边缘外延生长
DOI：
10.1002/adma.201803665
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发表时间：
2018
影响因子：
29.4
通讯作者：
Jun He
中科院分区：
文献类型：
--
作者：
Yu Zhang;Lei Yin;Junwei Chu;Tofik Ahmed Shifa;Jing Xia;Feng Wang;Yao Wen;Xueying Zhan;Zhenxing Wang;Jun He
基于过渡金属二硫属化物（TMD）的2D金属-半导体异质结构被认为是各种领域的有趣构建模块，例如接触工程和高频器件。尽管迄今为止已经构建了一系列利用半导体TMD的p-n结，但是还没有报道使用2D金属类似物实现这样的方案。本文采用化学气相沉积（CVD）方法在蓝宝石衬底上制备了纳米尺度的单层金属NbS 2。更重要的是，通过“两步”CVD方法实现了NbS 2-WS 2横向金属-半导体异质结构的外延生长。在这里实现了横向和纵向NbS 2-WS 2异质结构。透射电子显微镜研究揭示了一个明确的化学调制与不同的接口。拉曼和光致发光图谱证实了生长态NbS 2-WS 2异质结构的精确控制的空间调制。NbS 2-WS 2异质结构的存在通过电输运测量进一步证明。这项工作拓宽了TMD基异质结构的原位合成的视野，并启发了基于2D金属-半导体异质结构的应用的可能性。
2D metal‐semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high‐frequency devices. Although, a series of p–n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS2on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS2‐WS2lateral metal‐semiconductor heterostructures via a “two‐step” CVD method is realized. Both the lateral and vertical NbS2‐WS2heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as‐grown NbS2‐WS2heterostructures. The existence of the NbS2‐WS2heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD‐based heterostructures and enlightens the possibility of applications based on 2D metal‐semiconductor heterostructures.