Low temperature tunneling magnetoresistance on (La,Sr)MnO3∕Co junctions with organic spacer layers
Low temperature tunneling magnetoresistance on (La,Sr)MnO3∕Co junctions with organic spacer layers
复制标题
DOI：
10.1063/1.2924435
复制
发表时间：
2008-05
影响因子：
3.2
通讯作者：
H. Vinzelberg;J. Schumann;D. Elefant;R. B. Gangineni;J. Thomas;B. Büchner
中科院分区：
文献类型：
--
作者：
H. Vinzelberg;J. Schumann;D. Elefant;R. B. Gangineni;J. Thomas;B. Büchner
本文关注有机自旋阀中的巨磁电阻（MR）效应，这种效应是在以（La，Sr）MnO₃（LSMO）为基础的结中实现的，该结具有三（8 - 羟基喹啉）铝（Alq₃）间隔层和铁磁顶层。实验工作重点在于理解这类磁开关元件的输运行为。器件制备是在一个配备有掩模更换器的超高真空室内，通过在SrTiO₃衬底上蒸发和溅射，并利用脉冲激光技术沉积LSMO条纹来进行的。对所制备元件的磁电阻的磁场和温度依赖性进行了研究。在4.2K下，在从50Ω到MΩ的较宽电阻区间内观察到了自旋阀效应，然而，其与间隔层厚度和器件面积并无系统的相关性。在一些样品中，磁电阻随偏置电压的变化而改变符号。与传统的磁隧道相比，观察到磁电阻的偏置电压依赖性具有相似性……
This paper concerns with giant magnetoresistance (MR) effects in organic spin valves, which are realized as layered (La,Sr)MnO3 (LSMO)-based junctions with tris-(8, hydroxyquinoline) aluminum (Alq3)-spacer and ferromagnetic top layers. The experimental work was focused on the understanding of the transport behavior in this type of magnetic switching elements. The device preparation was carried out in an ultrahigh vacuum chamber equipped with a mask changer by evaporation and sputtering on SrTiO3 substrates with LSMO stripes deposited by pulsed laser technique. The field and temperature dependences of the MR of the prepared elements are studied. Spin-valve effects at 4.2K have been observed in a broad resistance interval from 50Ω to MΩ range, however, without systematic dependence on spacer layer thickness and device area. In some samples, the MR changes sign as a function of the bias voltage. The observed similarity in the bias voltages dependences of the MR in comparison with conventional magnetic tunnel...