HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
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DOI：
10.1109/55.790735
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发表时间：
1995-06-01
影响因子：
4.9
通讯作者：
MATSUNAMI, H
中科院分区：
文献类型：
--
作者：
ITOH, A;KIMOTO, T;MATSUNAMI, H
利用4 H-SiC肖特基势垒二极管可以实现高压整流器的高性能，这些器件的典型比导通电阻（R（on））在24 ℃时为1.4 × 10（3）Ω cm（3这些基于4 H-SiC的器件的R（on）低于基于6 H-SiC的高-对于肖特基接触金属，本文采用了Au、Ni和Ti，通过对电流-电压特性的分析，确定了这些金属对4 H-SiC的势垒高度，通过控制势垒高度可以达到降低功率损耗的目的。
High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes, A typical specific on-resistance (R(on)) of these devices was 1.4 x 10(3) Omega cm(3) at 24 degrees C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R(on)'s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage, As for Schottky contact metals, Au, Ni, and Ti were employed in this study, The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.