Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon.
Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon.
复制标题
束诱导界面重排对非晶硅固相外延结晶的主要影响。
作者：
Williams;Elliman;Brown;Seidel
