Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs
Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs
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用于 2μm LED 的 I 型 GeSn/SiGeSn 多量子阱的室温直接带隙电致发光
DOI：
10.1016/j.jlumin.2020.117539
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发表时间：
2020
影响因子：
3.6
通讯作者：
Cheng Buwen
中科院分区：
文献类型：
--
作者：
Peng Linzhi;Li Xiuli;Zheng Jun;Liu Xiangquan;Li Mingming;Liu Zhi;Xue Chunlai;Zuo Yuhua;Cheng Buwen
设计并制备了两种Ge 1-xSnx/Si0.1Ge0.85Sn0.05（x = 7.3%和8.5%）多量子威尔斯（MQW）基发光二极管（LED），以实现102 μm波段的高效发光。在室温下观察到多量子阱发光二极管在1980 nm（0.626 eV）和2060 nm（0.602 eV）波长处的电致发光（EL）。注入电流密度与电致发光强度之间的超线性关系说明了高的带间辐射复合效率。利用形变势理论计算表明，形成了I型能带排列，并与n1Γ-n1 HH直接带隙跃迁的量子限制效应相对应.这些结果表明GeSn/SiGeSn多量子阱LED是一种很有前途的2 μm波段全IV族硅基光源。
Two Ge1-xSnx/Si0.1Ge0.85Sn0.05(x = 7.3% and 8.5%) multi-quantum wells (MQWs) based light emitting diodes (LEDs) were designed and fabricated to achieve efficient light emission in the ∼2 μm wavelength band. Electroluminescence (EL) at wavelengths of 1980 nm (0.626 eV) and 2060 nm (0.602 eV) from the MQWs light emitting diodes were observed at room temperature. Super-linear dependence between the injected current density and EL intensity illustrates the high band-to-band radiative recombination efficiency. Theoretical calculations using deformation potentials theory reveal that the type-I band alignment is formed, and correspond well with the quantum confinement effect of the direct-bandgap transitions of n1Γ- n1HH. These results indicate that GeSn/SiGeSn MQW-LEDs is a promising full group-IV silicon-based light source in the 2 μm waveband.