Contact Behaviors Between Zinc Oxide Nanowires and Metal Electrodes

Contact Behaviors Between Zinc Oxide Nanowires and Metal Electrodes
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氧化锌纳米线与金属电极的接触行为

DOI:
10.1166/jnn.2009.c041
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发表时间:
2009-02-01
影响因子:
--
通讯作者:
Ye, Xiongying
Ye, Xiongying
中科院分区:
工程技术4区
文献类型:
--
作者:
Wang, Dingqu;Zhu, Rong;Ye, Xiongying

文献摘要

被引文献

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研究了半导体氧化锌纳米线与金属电极的接触行为。利用聚焦离子束(FIB)在纳米线与金属电极接触处沉积Pt,消除肖特基势垒。通过在纳米线的一个或两个触点上沉积Pt,我们构建了三种类型的纳米结构来研究其接触行为。实验结果表明,FIB技术是消除接触障碍的有效方法。我们还建立了一个电模型来拟合和预测金属-半导体-金属结构的I-V特性。
The paper reports studies on contact behaviors between semiconducting zinc oxide nanowires and metal electrodes. Focused ion beam (FIB) is employed to deposit Pt on the contact between the nanowire and the metal electrodes for eliminating the Schottky barriers. By depositing Pt on one or two contacts of nanowires, we construct three types of nanostructure to investigate the contact behaviors. The experimental results reveal that FIB technology is an effective way to eliminate the contact barriers. We also establish a electric model to fit and predict the I-V characteristics for a metal-semiconductor-metal structure.