High quality factor GaAs microcavity with buried bullseye defects
High quality factor GaAs microcavity with buried bullseye defects
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DOI：
10.1103/physrevmaterials.2.052201
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发表时间：
2018-05
影响因子：
3.4
通讯作者：
K. Winkler;N. Gregersen;T. Häyrynen;B. Bradel;A. Schade;M. Emmerling;M. Kamp;S. Höfling;C. Schneider
中科院分区：
文献类型：
--
作者：
K. Winkler;N. Gregersen;T. Häyrynen;B. Bradel;A. Schade;M. Emmerling;M. Kamp;S. Höfling;C. Schneider
低模式体积的高品质因数固态微腔的开发为片上腔量子电动力学实验和高性能纳米光子器件的开发铺平了道路。在这里，我们报告了一种新型固态垂直微腔的实现，该微腔无需深蚀刻即可在横向上限制电磁场。这种限制源于浅蚀刻和外延过度生长技术中压印的空腔层的局部伸长。我们证明，可以通过由一组亚波长尺寸的同心环组成的特定面内牛眼几何形状来提高此类微腔的品质因数。这种设计产生了平滑的有效横向光子势，从而减少了横向散射损失，这使得它对于需要严格空间限制的激子极化物理框架中的实验非常有吸引力。
The development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid-state vertical microcavity, which allows for confinement of the electromagnetic field in the lateral direction without deep etching. The confinement originates from a local elongation of the cavity layer imprinted in a shallow etch and epitaxial overgrowth technique. We show that it is possible to improve the quality factor of such microcavities by a specific in-plane bullseye geometry consisting of a set of concentric rings with subwavelength dimensions. This design results in a smooth effective lateral photonic potential and therefore in a reduction of lateral scattering losses, which makes it highly appealing for experiments in the framework of exciton-polariton physics demanding tight spatial confinement.