The Narrowest Band Gap Ever Observed in Molecular Ferroelectrics: Hexane-1,6-diammonium Pentaiodobismuth(III)
The Narrowest Band Gap Ever Observed in Molecular Ferroelectrics: Hexane-1,6-diammonium Pentaiodobismuth(III)
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分子铁电体中观察到的最窄带隙：己烷-1,6-二铵五碘铋(III)
DOI：
10.1002/anie.201709588
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发表时间：
2018-01-08
影响因子：
16.6
通讯作者：
Xiong, Ren-Gen
中科院分区：
文献类型：
--
作者：
Zhang, Han-Yue;Wei, Zhenhong;Xiong, Ren-Gen
窄的带隙和优异的铁电性在铁电体中本质上是矛盾的，因为由热激发载流子数量的增加引起的漏电流将导致铁电性的劣化。通过有机-无机混合材料的带隙工程，现已开发出一种新型分子铁电体--己烷-1，6-二铵五碘化铋（HDA-BiI 5）。它具有1.89 eV的本征带隙，因此代表了第一个带隙小于2.0 eV的分子铁电体。同时，采用低温溶液工艺成功制备了高质量的HDA-BiI 5铁电薄膜，实现了高精度的可控畴反转。HDA-BiI 5具有窄的禁带宽度和优异的铁电性，是分子铁电体开发的一个里程碑，具有广阔的应用前景
Narrow band gaps and excellent ferroelectricity are intrinsically paradoxical in ferroelectrics as the leakage current caused by an increase in the number of thermally excited carriers will lead to a deterioration of ferroelectricity. A new molecular ferroelectric, hexane-1,6-diammonium pentaiodo-bismuth (HDA-BiI5), was now developed through band gap engineering of organic-inorganic hybrid materials. It features an intrinsic band gap of 1.89 eV, and thus represents the first molecular ferroelectric with a band gap of less than 2.0 eV. Simultaneously, low-temperature solution processing was successfully applied to fabricate high-quality ferroelectric thin films based on HDA-BiI5, for which high-precision controllable domain flips were realized. Owing to its narrow band gap and excellent ferroelectricity, HDA-BiI5 can be considered as a milestone in the exploitation of molecular ferroelectrics, with promising applications