Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films
Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films
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DOI：
10.1063/1.1529292
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发表时间：
2003-01-01
影响因子：
3.2
通讯作者：
Noma, T
中科院分区：
文献类型：
--
作者：
Kato, H;Kashio, N;Noma, T
对通过等离子体增强化学气相沉积沉积的一系列具有不同氮含量的氢化非晶氮氧化硅和氮化硅薄膜进行光致发光（PL）测量。从PL和PL激发光谱中发现，无论样品是氮氧化硅还是氮化硅，样品的Urbach能量与其PL半峰宽成正比。时间分辨 PL 测量表明，PL 峰值能量在激发后随时间变化，显示出对两种材料化学成分的系统依赖性。无论是否存在氧，在两种材料中观察到的 PL 都具有非常相似的特性，这强烈表明 PL 是由相同的化学结构（更具体地说是 Si-N 键）产生的，并且这两种材料具有与静态无序相关的相似带尾态。在这两种材料中，发现光激发成带尾态的电子和空穴首先通过类激子复合过程然后通过辐射隧道复合过程复合。 (C) 2003 年美国物理研究所。
Photoluminescence (PL) measurements were performed on a series of hydrogenated amorphous silicon oxynitride and silicon nitride films with different nitrogen contents deposited by plasma-enhanced chemical-vapor deposition. From the PL and PL excitation spectra, the Urbach energy of the sample is found to be proportional to its PL half-maximum width, regardless of whether the sample is silicon oxynitride or silicon nitride. Time-resolved PL measurements showed that PL peak energy varies with time after the excitation, showing a systematic dependence on the chemical composition in the two materials. That the PLs observed in the two materials have very similar characteristics regardless of the presence of oxygen strongly indicates that the PLs result from the same chemical structure, more specifically Si-N bonds, and that the two materials have similar band-tail states associated with the static disorder. In the two materials, it is found that the electrons and holes photoexcited into such band-tail states recombine first through an excitonlike recombination process and then through a radiative tunneling recombination process. (C) 2003 American Institute of Physics.