Resistive switching characteristics of a single Zn-doped CuS nanoball anchored with multi-walled carbon nanotubes
Resistive switching characteristics of a single Zn-doped CuS nanoball anchored with multi-walled carbon nanotubes
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DOI：
10.1016/j.matdes.2016.03.160
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发表时间：
2016-07-05
影响因子：
8.4
通讯作者：
Ray, Samit K.
中科院分区：
文献类型：
--
作者：
Bera, Susnata;Katiyar, Ajit K.;Ray, Samit K.
我们报道了一种新的合成方法，从单一分子源[Cu（en）（2）ZnCl 4]中心点DMSO配合物在多壁碳纳米管（MWCNT）表面生长Zn掺杂的CuS（CZS）纳米球。单一前体作为Cu+2和Zn+2离子的来源，用于形成纳米晶球。高分辨率的电子显微照片清楚地揭示了结晶CZS纳米球的MWCNT表面上的形成。用XPS和UPS分析了CZS的化学组成和局部成键。利用导电探针原子力显微镜（CAFM）对单颗CZS纳米球的电流-电压（I-V）特性进行了研究。I-V特性中的明显滞后证明了在低置位和复位电压下锚定有MWCNT的纳米球中的双极电阻开关。该研究揭示了一种新的技术来生长掺杂半导体晶体管，用于阻变存储器件。(C)2016爱思唯尔有限公司版权所有
We report a new synthesis method to grow Zn-doped CuS (CZS) nanoballs on multi-walled carbon nanotube (MWCNT) surfaces from a single molecular source [Cu(en)(2)ZnCl4]center dot DMSO complex. The single precursor acts as the source for both Cu+2 and Zn+2 ions for the formation of nanocrystalline balls. High resolution electron micrographs clearly revealed the formation of crystalline CZS nanoballs on the surface of MWCNT. The chemical composition and local bonding of CZS have been examined by XPS and UPS analysis. A current-voltage (I-V) characteristic on single CZS nanoballs was carried out using conducting probe atomic force microscopy (CAFM). A clear hysteresis in I-V characteristics demonstrated the bipolar resistive switching in the nanoballs anchored with MWCNTs at low set and reset voltages. The study reveals a novel technique to growdoped semiconductor nanocrystal for its application in resistive switching memory devices. (C) 2016 Elsevier Ltd. All rights reserved.