Performance improvement of InGaN/GaN light-emitting diodes with triangular- shaped multiple quantum wells
Performance improvement of InGaN/GaN light-emitting diodes with triangular- shaped multiple quantum wells
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DOI：
10.1088/0268-1242/24/12/125003
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发表时间：
2009-12
影响因子：
1.9
通讯作者：
Lihong Zhu;Qinghong Zheng;Bao-lin Liu
中科院分区：
文献类型：
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作者：
Lihong Zhu;Qinghong Zheng;Bao-lin Liu
采用在蓝宝石衬底上生长的三角形InGaN/GaN多量子阱(MQW)作为发光二极管(LED)的有源层。归一化集成光致发光 (PL) 强度的温度依赖性表明，具有三角形 MQW 结构的 LED 的内量子效率 (IQE) 远高于具有传统矩形 MQW 结构的 LED。对两个系列器件的电致发光（EL）光谱作为注入电流的函数进行了比较研究。结果发现，三角形MQW结构的器件表现出更强的强度和更窄的线宽。此外，峰值能量几乎与注入电流无关，表明三角形 MQW LED 比矩形 MQW LED 更高效、更稳定。
Triangular-shaped InGaN/GaN multiple quantum wells (MQWs) grown on a sapphire substrate were adopted as an active layer of light-emitting diodes (LEDs). The temperature dependence of the normalized integrated photoluminescence (PL) intensity showed that the internal quantum efficiency (IQE) of the LEDs with triangular-shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures. The electroluminescence (EL) spectra of the two series devices have been comparatively studied as functions of injection current. It was found that the device with the triangular-shaped MQW structure exhibited a stronger intensity and a narrower linewidth. Furthermore, the peak energy is nearly independent of the injection current, indicating that the triangular MQW LEDs are more efficient and stable than the rectangular ones.