A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality
A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality
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具有集成功率检测器和增益控制功能的毫米波低噪声放大器 MMIC
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
O. Ambacher
中科院分区：
文献类型：
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作者：
A. Tessmann;A. Leuther;H. Massler;S. Wagner;F. Thome;M. Schlechtweg;O. Ambacher
紧凑型 E 频段放大器电路已开发用于超高容量点对点通信链路。毫米波单片集成电路（MMIC）由两级低噪声放大器（LNA）、10 dB线路耦合器、集成检波二极管和单级可变增益放大器（VGA）组成。该多功能MMIC是通过使用基于50 nm InAlAs/InGaAs的变质高电子迁移率晶体管（mHEMT）技术并结合接地共面波导拓扑（GCPW）和共源共栅晶体管来实现的，从而在毫米波频率下实现了非常低的噪声系数、高增益和大工作带宽。所制造的 LNA 电路在 78 GHz 下实现了 37 dB 的最大增益，在 69 至 98 GHz 频率范围内实现了超过 34 dB 的增益。此外，在工作频率下获得了 2.3 dB 的室温 (T = 293 K) 噪声系数和 39.000 V/W 的探测器响应度。
A compact E-band amplifier circuit has been developed for use in ultra-high capacity point-to-point communication links. The millimeter-wave monolithic integrated circuit (MMIC) consists of a two-stage low-noise amplifier (LNA), a 10 dB line coupler, an integrated detector diode and a single-stage variable gain amplifier (VGA). The multifunctional MMIC was realized by using a 50 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide topology (GCPW) and cascode transistors, thus leading to a very low noise figure in combination with high gain and large operational bandwidth at millimeter-wave frequencies. The fabricated LNA circuit achieved a maximum gain of 37 dB at 78 GHz and more than 34 dB in the frequency range from 69 to 98 GHz. Furthermore, a room temperature (T = 293 K) noise figure of 2.3 dB and a detector responsivity of 39.000 V/W have been obtained at the frequency of operation.