Weak localization, Aharonov-Bohm oscillations, and decoherence in arrays of quantum dots
Weak localization, Aharonov-Bohm oscillations, and decoherence in arrays of quantum dots
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DOI：
10.1063/1.3518036
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发表时间：
2010-11
影响因子：
0.8
通讯作者：
D. Golubev;A. G. Semenov;A. Zaikin
中科院分区：
文献类型：
--
作者：
D. Golubev;A. G. Semenov;A. Zaikin
结合散射矩阵理论、非线性σ模型和Keldysh技术，我们发展了一种统一的理论方法，用于非微扰研究电子-电子相互作用对任意量子点阵列中弱局域化和Aharonov-Bohm振荡的影响.我们的模型包括弱无序导体，强无序导体和金属量子点。在所有这些情况下，当T→0时，电子退相干时间饱和到一个有限值，该值由一个普适公式确定，该公式与许多实验在定量上一致。我们的分析提供了压倒性的证据，有利于电子-电子相互作用作为一个普遍的机制，零温度电子退相干无序导体。
Combining scattering matrix theory with the non-linear σ-model and the Keldysh technique, we develop a unified theoretical approach for non-perturbative study of the effect of electron-electron interactions on weak localization and Aharonov-Bohm oscillations in arbitrary arrays of quantum dots. Our model embraces weakly disordered conductors, strongly disordered conductors, and metallic quantum dots. In all these cases, as T→0 the electron decoherence time saturates to a finite value determined by a universal formula which agrees quantitatively with a number of experiments. Our analysis provides overwhelming evidence in favor of electron-electron interactions as a universal mechanism for zero temperature electron decoherence in disordered conductors.