Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode.
Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode.
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DOI：
10.1103/physrevlett.100.047207
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发表时间：
2008-01
影响因子：
8.6
通讯作者：
T. Niizeki;N. Tezuka;K. Inomata
中科院分区：
文献类型：
--
作者：
T. Niizeki;N. Tezuka;K. Inomata
本文研究了Fe（001）/MgO（001）/Al_2O_3 Fe（001）/Cr（001）全外延磁性隧道结中自旋相关的量子阱共振。dI/dV光谱清楚地显示了共振峰，其如从头计算中预测的那样根据双金属电极的厚度系统地偏移[Zhong-Yi Lu等人，Phys. Rev. Lett. 94，207210（2005）]。磁输运在与共振峰相同的偏置电压下被强烈调制。这种在特定偏压下对磁性隧道结中磁输运的控制将有助于有源自旋电子器件的发展。
Spin dependent quantum well resonance has been investigated in fully epitaxial magnetic tunnel junctions with Fe(001)/MgO(001)/ultrathin Fe(001)/Cr(001) structure. The dI/dV spectra clearly show the resonant peaks which shift systematically depending on the thickness of an ultrathin electrode as predicted in ab initio calculation [Zhong-Yi Lu et al, Phys. Rev. Lett. 94, 207210 (2005)]. The magnetotransport is strongly modulated at the same bias voltage as the resonant peaks. This control of the magnetotransport in magnetic tunnel junctions at a specific bias voltage will contribute to the development of active spintronic devices.