Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
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DOI：
10.1063/1.4896679
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发表时间：
2014-09
影响因子：
4
通讯作者：
L. Redaelli;A. Mukhtarova;S. Valdueza-Felip;A. Ajay;C. Bougerol;C. Himwas;J. Faure-Vincent;C. Dura
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文献类型：
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作者：
L. Redaelli;A. Mukhtarova;S. Valdueza-Felip;A. Ajay;C. Bougerol;C. Himwas;J. Faure-Vincent;C. Dura
本文报道了量子阱厚度对In0.12Ga0.88N/GaN多量子阱太阳能电池有效带隙和转换效率的影响。阴极发光测量结果表明，将井厚从1.3 nm增加到5.4 nm，能带跃迁可以从395 nm红移到474 nm。然而，吸收边的红移在吸收中不太明显：在较厚的井中，向较高能级的跃迁占主导地位。此外，在较厚的井中，部分应变松弛会导致缺陷的形成，从而降低太阳能电池的整体性能。
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.