High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
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DOI：
10.1109/led.2019.2897694
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发表时间：
2019-04-01
影响因子：
4.9
通讯作者：
Lau, Kei May
中科院分区：
文献类型：
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作者：
Jiang, Huaxing;Zhu, Renqiang;Lau, Kei May
在这封信中，我们报告了硅基高性能 p-GaN HEMT，具有强大的栅极操作能力。 p-GaN HEMT 首次在正向栅极击穿后证明了保留的关态漏极阻断能力。得益于金属/p-GaN接触区域的减少，栅极击穿仅限于金属/p-GaN结处发生，而p-GaN/AlGaN/GaN结完好无损。该器件具有最先进的特性，ID 为 100 μA/mm 时阈值电压为 1.75 V（线性外推为 2.3 V），V-GS 为 8 V 时最大漏极电流为 610 mA/mm，导通电阻低为 1.8 m Omega.cm(2)，ID 为 1 μA/mm 时定义为 1100 V 高击穿电压接地基板。
In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs after forward gate breakdown. Benefitting from the reduced metal/p-GaN contact region, the gate breakdown was limited to take place only at the metal/p-GaN junction, with the p-GaN/AlGaN/GaN junction intact. The device shows state-of-the-art characteristics with a large threshold voltage of 1.75 V at ID of 100 mu A/mm(2.3 V by linear extrapolation), a high maximum drain current of 610 mA/mm at V-GS of 8 V, a low specific ON-resistance of 1.8 m Omega.cm(2), and a high breakdown voltage of 1100 V defined at I-D of 1 mu A/mm with grounded substrate.