Tin sulfide (SnS) nanostructured films deposited by continuous spray pyrolysis (CoSP) technique for dye-sensitized solar cells applications

Tin sulfide (SnS) nanostructured films deposited by continuous spray pyrolysis (CoSP) technique for dye-sensitized solar cells applications
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DOI:
10.1016/j.apsusc.2015.07.211
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发表时间:
2015-12-15
影响因子:
6.7
通讯作者:
Dutta, Viresh
Dutta, Viresh
中科院分区:
材料科学1区
文献类型:
--
作者:
Alam, Firoz;Dutta, Viresh

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以氯化锡和硫脲为原料,采用连续喷雾热解(CoSP)技术,在透明导电玻璃衬底上制备了SnS纳米结构薄膜。结构、形貌和光学性能表明,所合成的SnS纳米结构薄膜为(101)取向的正交晶型SnS,其直接带隙为1.40 eV。X射线光电子能谱(XPS)分析证实了Sn2+氧化生成了纯SnS。利用Brunauer-Emmett-Teller(BET)技术对SnS纳米结构薄膜进行了表征,测得其比表面积和孔容分别为11.4m(2)/g和0.02 cm(2)/g。该薄膜已被用作三碘化合物/碘(I-3(-)/I-)基染料敏化太阳能电池的对电极。面积为0.25 cm(2)的SnS纳米结构CE电池的功率转换效率(2.0+/-0.06%)低于使用标准铂(Pt)CE电池(4.5+/-0.13%)。然而,在本研究中,CoSP技术在沉积纳米结构SnS Ce薄膜方面的实用性已经得到证实。(C)2015爱思唯尔B.V.保留所有权利。
Tin sulfide (SnS) nanostructured films have been deposited on transparent conducting glass substrate using continuous spray pyrolysis (CoSP) technique using aqueous spray solution of tin chloride and thiourea. Structural, morphological and optical properties of as-synthesized SnS nanostructured films showed the formation of (1 0 1) oriented orthorhombic SnS with nanoflakes having a direct band gap of 1.40 eV. X-ray photoelectron spectroscopy (XPS) analysis confirms the formation of pure SnS with Sn in +2 oxidation state. The SnS nanostructured film has also been characterized using Brunauer-Emmett-Teller (BET) technique to determine the surface area and pore volume which are found to be 11.4 m(2)/g and 0.02 cm(2)/g, respectively. The film has been used as a counter electrode (CE) in a triiodide/iodide (I-3(-)/I-) based dye-sensitized solar cells (DSSCs). The DSSCs of 0.25 cm(2) area with SnS nanostructured CE exhibits a lower power conversion efficiency (2.0 +/- 0.06%) than that for the cell with standard platinum (Pt) CE (4.5 +/- 0.13%). However, the usefulness of the CoSP technique for deposition of nanostructures SnS CE film has been established in the present study. (C) 2015 Elsevier B.V. All rights reserved.