Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation
Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation
复制标题
脉冲运行中低压功率 MOS 和 SOA 热不稳定性分析模型
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
N. Rinaldi
中科院分区：
文献类型：
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作者：
P. Spirito;G. Breglio;V. d’Alessandro;N. Rinaldi
一些大电流功率MOS器件的热不稳定性已被证明是限制SOA性能的重要因素。在本文中，我们提出了一个新的分析模型来解释这种类型的不稳定性在瞬态操作中，基于漏极电流和热阻的正温度系数的分析配方。该模型能够预测给定器件结构和布局的热不稳定性的发生，并且可以用于定义器件的允许SOA，并作为设计指南来设计更坚固的器件。
Thermal instability presented by some high current power MOS has been shown to limit significantly the SOA capability. In this paper, we present a new analytical model to explain this type of instability in transient operation, based on an analytical formulation for both the positive temperature coefficient of the drain current and for the thermal resistance. The model is capable of predicting the onset of thermal instability for a given device structure and layout, and can be used both to define the allowed SOA of the device and as a design guide to design more rugged devices.