Efficient Clocked Electron Transfer on Superfluid Helium
Efficient Clocked Electron Transfer on Superfluid Helium
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DOI：
10.1103/physrevlett.107.266803
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发表时间：
2011-12-19
影响因子：
8.6
通讯作者：
Lyon, S. A.
中科院分区：
文献类型：
--
作者：
Bradbury, F. R.;Takita, Maika;Lyon, S. A.
前所未有的传输效率证明了电子在微米级超流氦填充通道的表面上的增选硅加工技术，以构建一个电荷耦合器件的等效。强边缘场导致在二维中超过十亿次循环后不可检测的罕见转移失败。这种极其有效的传输是在120个通道中同时测量的，最多20个电子包，并下降到单个占用的像素。这些结果为在混合量子比特系统中大规模传输用于通信的计算量子比特或电子自旋量子比特指明了方向。
Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium-filled channels by co-opting silicon processing technology to construct the equivalent of a charge-coupled device. Strong fringing fields lead to undetectably rare transfer failures after over a billion cycles in two dimensions. This extremely efficient transport is measured in 120 channels simultaneously with packets of up to 20 electrons, and down to singly occupied pixels. These results point the way towards the large scale transport of either computational qubits or electron spin qubits used for communications in a hybrid qubit system.