The low-temperature preparation for low-selenium Sb2SxSey thin film solar cells with efficiency of > 5%

The low-temperature preparation for low-selenium Sb2SxSey thin film solar cells with efficiency of > 5%
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DOI:
10.1007/s11051-021-05155-y
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发表时间:
2021-02
影响因子:
2.5
通讯作者:
Shasha Fan;Chengwu Shi;Kai Lv;Qi Wang;Fuling Guo;Wangchao Chen
Shasha Fan;Chengwu Shi;Kai Lv;Qi Wang;Fuling Guo;Wangchao Chen
中科院分区:
材料科学4区
文献类型:
--
作者:
Shasha Fan;Chengwu Shi;Kai Lv;Qi Wang;Fuling Guo;Wangchao Chen

文献摘要

相似文献

首次报道了以Sb_2 O_3、Se、CS_2和正丁胺的DMF混合溶液为前驱体,在200 °C的低温热解-晶化温度下制备出低硒Sb_2S_xSey(x:y= 3.0:0.2)薄膜。具有FTO/紧凑型TiO 2/Sb 2SxSey/spiro-OMeO 2/Au结构的相应薄膜太阳能电池实现了5.54%的功率转换效率,沿着具有0.56 V的开路电压、16.16 mA cm-2的短路光电流密度和0.61的填充因子。低温制备晶态Sb 2SxSey薄膜为柔性Sb 2SxSey薄膜太阳能电池的组装提供了一条可行的途径。
The low pyrolysis-crystallization temperature of 200 °C was firstly reported to prepare crystalline low-selenium Sb2SxSey(x:y= 3.0:0.2) thin films using the mixture solution of Sb2O3, Se, CS2, andn-butylamine in DMF as a precursor solution. The corresponding thin film solar cells with the architecture of FTO/compact TiO2/Sb2SxSey/spiro-OMeTAD/Au achieved a power conversion efficiency of 5.54%, along with an open-circuit voltage of 0.56 V, a short-circuit photocurrent density of 16.16 mA cm−2and a fill factor of 0.61. The low-temperature preparation process of crystalline Sb2SxSeythin films can provide a feasible approach for assembling the flexible Sb2SxSeythin film solar cells.Graphical abstract