Non-Volatile Ternary Content Addressable Memory based on Phase Change Nanoelectromechanical (NEM) Relay
Non-Volatile Ternary Content Addressable Memory based on Phase Change Nanoelectromechanical (NEM) Relay
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DOI：
10.1109/esscirc55480.2022.9911327
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发表时间：
2022-09
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通讯作者：
Mohammad Ayaz Masud;Luis Hurtado;G. Piazza
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作者：
Mohammad Ayaz Masud;Luis Hurtado;G. Piazza
我们首次展示了一种基于相变纳米机电继电器（PCNRs）的三元内容可寻址存储器（TCAM）架构。无挥发性（NV）、高开关比（108）和低泄漏操作使PCNR成为高密度TCAM的理想候选者。此外，PCNR器件与后端（BEOL）兼容，允许非常小的TCAM单元尺寸为18F2。模拟了一个TCAM，每个单元只有1个晶体管和2个PCNR器件（1T2P），它具有133 ps的搜索延迟和0.721 pJ的64位能耗，使其成为使用CMOS技术以外的TCAM最具竞争力的方法之一。
We demonstrate, for the first time, a ternary content-addressable memory (TCAM) architecture based on phase change nanoelectromechanical relays (PCNRs). The non-volatility (NV), high ON-OFF ratio (108), and low leakage operation make PCNR an ideal candidate for high density TCAM. Additionally, PCNR devices are back-end-of-the-line (BEOL) compatible, allowing for a very small TCAM cell size of 18F2. A TCAM, with only 1 transistor and 2 PCNR devices (1T2P) per cell is simulated and it exhibits 133 ps search latency and 0.721 pJ energy consumption for 64 bits, making it one of the most competitive approaches for TCAM using beyond CMOS technologies.