A comprehensive study on RF MEMS switch

A comprehensive study on RF MEMS switch
复制标题

DOI:
10.1007/s00542-014-2276-7
复制
发表时间:
2014-12
期刊:
Microsystem Technologies
影响因子:
--
通讯作者:
H. Jaafar;K. S. Beh;N. Yunus;W. Z. W. Hasan-W.-Z.-W.-Hasan-2209870460;S. Shafie;O. Sidek
H. Jaafar;K. S. Beh;N. Yunus;W. Z. W. Hasan-W.-Z.-W.-Hasan-2209870460;S. Shafie;O. Sidek
中科院分区:
其他
文献类型:
--
作者:
H. Jaafar;K. S. Beh;N. Yunus;W. Z. W. Hasan-W.-Z.-W.-Hasan-2209870460;S. Shafie;O. Sidek

文献摘要

被引文献

相似文献

本文着重介绍了近年来射频MEMS开关器件发展的趋势和需求、原理、设计考虑、关键性能和制造技术。比较和讨论了射频MEMS开关的性能和特性,如驱动电压、插入损耗、隔离和易于制造和应用的成本。
This paper emphasis on state-of-the-art of the earlier until the current trend and demand, principles, design considerations, key performance and fabrication technology of RF MEMS switch devices developed over the past few years. RF MEMS switch performance and features such as actuation voltage, insertion loss, isolation and ease with cost of fabrication and applications are compared and discussed.