Photoemission of graded-doping GaN photocathode
Photoemission of graded-doping GaN photocathode
复制标题
梯度掺杂GaN光电阴极的光电发射
DOI：
10.1088/1674-1056/20/3/037902
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发表时间：
2011
影响因子：
1.7
通讯作者：
Du Yu-Jie
中科院分区：
文献类型：
--
作者：
Wang Xiao-Hui;Fu Xiao-Qian;Zhang Jun-Ju;Chang Ben-Kang;Li Biao;Du Yu-Jie
研究了梯度掺杂GaN光电阴极的光电发射过程，发现内建电场可以增加光生电子的逃逸几率和有效扩散长度，从而提高量子效率。研究了高电场下的谷间散射机制和晶格散射机制。为了防止出现负微分迁移率，需要优化表面掺杂浓度，计算为3.19×1017 cm−3。进一步优化掺杂分布可以实现更高性能的梯度掺杂GaN光电阴极。
We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×1017 cm−3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.