Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0–1) on Insulating Substrate
Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0–1) on Insulating Substrate
复制标题
DOI：
10.1143/jjap.48.03b002
复制
发表时间：
2009-03
影响因子：
1.5
通讯作者：
M. Kurosawa;Y. Tsumura;T. Sadoh;M. Miyao
中科院分区：
文献类型：
--
作者：
M. Kurosawa;Y. Tsumura;T. Sadoh;M. Miyao
研究了低温（<500 °C）下界面氧化层对绝缘体上非晶 Si1-xGex (x: 0–1) 薄膜铝诱导结晶 (AIC) 的影响。在 Si 的情况下，对于在 Si 和 Al 层之间有或没有界面氧化物层的样品，实现了 Si/Al 层的反转。此外，还发现需要界面氧化层的存在才能获得具有（111）取向的大晶粒（～100μm）多晶硅。然而，在 SiGe 的情况下，界面氧化物层显着阻碍了 AIC 的生长。因此，层交换发生不均匀，即使在较长的退火时间（410℃，100小时）后也会导致不均匀的结晶。为了解决这个问题，研究了界面氧化物厚度对 AIC 生长的影响。结果，通过控制空气暴露时间，具有完整Ge分数（x：0-1）的样品实现了完全的层交换。提出了一个定性模型。
The effects of interfacial oxide layers on the Al-induced crystallization (AIC) of amorphous Si1-xGex (x: 0–1) films on an insulator at a low temperature (<500 °C) have been investigated. In the case of Si, the inversion of the Si/Al layers was achieved for samples with and without interfacial oxide layers between the Si and Al layers. In addition, it was found that the existence of interfacial oxide layers was required to obtain large grain (∼100 µm) polycrystalline Si with a (111) orientation. However, in the case of SiGe, the interfacial oxide layers significantly retarded AIC growth. Consequently, layer exchange occurred inhomogenously, which resulted in inhomogenous crystallization even after a long annealing time (410 °C, 100 h). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, complete layer exchange was achieved for samples with the whole Ge fractions (x: 0–1) by controlling the air exposure time. A qualitative model is presented.