Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers
Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers
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DOI：
10.1109/led.2016.2537835
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发表时间：
2016-04
影响因子：
4.9
通讯作者：
Huarui Sun;J. Pomeroy;Roland B. Simon;D. Francis;F. Faili;D. Twitchen;Martin Kuball
中科院分区：
文献类型：
--
作者：
Huarui Sun;J. Pomeroy;Roland B. Simon;D. Francis;F. Faili;D. Twitchen;Martin Kuball
报道了金刚石衬底GaN高电子迁移率晶体管（HEMT）晶片在25 °C至250 °C的热特性。GaN和金刚石之间的有效热边界电阻在升高的温度下由于非晶SiNx夹层的热导率增加而降低，因此可能抵消器件的热失控。结果表明，GaN-on-diamond的HEMT高功率操作的热效益，并提供有价值的信息，评估器件的热阻和可靠性。
The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.