Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials
Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials
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GaN 中冲击引起的带隙位移：变形势的各向异性
DOI：
10.1103/physrevb.71.115207
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
N. Johnson
中科院分区：
文献类型：
--
作者：
H. Peng;M. McCluskey;Y. Gupta;M. Kneissl;N. Johnson
在冲击波实验中，利用时间分辨的光吸收测量，研究了GaN的带隙位移作为沿c轴沿着单轴压缩的函数。平行于c轴的流体静力变形势acz = D1 s，是从平行于c轴的作用势acz = D2独立地确定的。根据实验结果，得到了一组形变势：acz = D1 = 1.9eV，acz = D2 = 1.8eV，D3 = 1.9eV，D4 = 1.0eV。这些值表明纤锌矿GaN中的变形势是各向异性的。
The band-gap shift of GaN has been examined as a function of uniaxial compression along the c axis using time-resolved, optical absorption measurements in shock wave experiments. The hydrostatic deformation potential acz˛ D1 sparallel to the c axisd, has been determined independently from act˛ D2 sperpendicular to the c axisd. Based on the experimental results, a set of deformation potentials has been obtained: acz˛ D1 = ˛9.6 eV, act˛ D2 = ˛8.2 eV, D3 = 1.9 eV, and D4 = ˛1.0 eV. These values indicate that the deformation potentials in wurtzite GaN are anisotropic.