Programming margin enlargement by material engineering for multilevel storage in phase-change memory
Programming margin enlargement by material engineering for multilevel storage in phase-change memory
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DOI：
10.1063/1.3240408
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发表时间：
2009-09
影响因子：
4
通讯作者：
Y. Yin;T. Noguchi;H. Ohno;S. Hosaka
中科院分区：
文献类型：
--
作者：
Y. Yin;T. Noguchi;H. Ohno;S. Hosaka
在这项工作中，我们调查的材料工程的影响，在双层相变存储器的编程裕度，这是最重要的参数的多级存储的稳定性。与TiN/SbTeN单元相比，TiSiN/GeSbTe双层单元表现出高达两到三个数量级的最高电阻水平与最低电阻水平的电阻比，这表明更大的编程裕度以及因此更高的稳定性和/或更多的可用水平。计算结果表明，顶部加热层和相变层的导热系数对编程裕度有显著影响。
In this work, we investigate the effect of the material engineering on programming margin in the double-layered phase-change memory, which is the most important parameter for the stability of multilevel storage. Compared with the TiN/SbTeN cell, the TiSiN/GeSbTe double-layered cell exhibits the resistance ratio of the highest to lowest resistance levels up to two to three orders of magnitude, indicating much larger programming margin and thus higher stability and/or more available levels. Our calculation results show that the resistivities of the top heating layer and the phase-change layer have a significant effect on the programming margin.