Smart Self-Driving Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs
Smart Self-Driving Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs
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DOI：
10.1109/jestpe.2019.2947366
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发表时间：
2020-03-01
影响因子：
5.5
通讯作者：
Lei, Qin
中科院分区：
文献类型：
--
作者：
Li, Chunhui;Zhang, Zhengda;Lei, Qin
宽带隙器件，如碳化硅和氮化镓，具有很高的开关速度潜力。然而，实际应用中的实际速度受到电路寄生和高侧开关和低侧开关在相腿配置中的相互作用（称为串扰效应）的限制。本文提出了一种具有串扰抑制能力的隔离电压源栅极驱动器，以充分利用碳化硅器件固有的高开关速度能力。通过辅助电路施加可变栅极电压，可以减轻串扰问题。采用原有的栅极源电压作为辅助电路驱动信号，栅极驱动器不引入任何额外的控制信号，避免了额外的信号/功率隔离，使辅助电路非常方便地实现在现有的商用栅极驱动器上。辅助电路使开关导通时栅极电压从0 V而不是-5 V上升，与传统栅极驱动器相比，开关速度更快，开关损耗更低。通过LTSPICE仿真和基于1.2 kv /60 a碳化硅mosfet的双脉冲测试实验，对所提出的栅极驱动器串扰抑制能力进行了评估。
Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching speed potential. However, the actual speed in practical application is limited by circuit parasitics and interaction between high-side switch and low-side switch in a phase-leg configuration, known as crosstalk effect. This article proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent high switching speed ability of silicon-carbide devices. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original gate-source voltage as auxiliary circuit driving signal, the gate driver does not introduce any extra control signals, which avoids additional signal/power isolations and makes the auxiliary circuit very convenient to be implemented on the existing commercial gate driver. The auxiliary circuit makes the gate voltage rise from 0 V other than -5 V when the switch turns on, leading to faster switching speed and lower switching loss compared with a traditional gate driver. LTSPICE simulation and double pulse test experiment based on 1.2-kV/60-A silicon-carbide MOSFETs are conducted to evaluate the crosstalk suppression capability of the proposed gate driver.