Dynamic growth steps of n x n dimer-adatom-stacking-fault domains on the quenched Si(111) surface.
Dynamic growth steps of n x n dimer-adatom-stacking-fault domains on the quenched Si(111) surface.
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淬火 Si(111) 表面上 n x n 二聚体吸附原子堆积断层域的动态生长步骤。
DOI：
10.1103/physrevb.53.12907
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Ohdomari
中科院分区：
文献类型：
--
作者：
Kumamoto;Hoshino;Kokubun;Ishimaru;Ohdomari
用高温扫描隧道显微镜研究了淬火Si（111）表面1× 1基体中Si（111）-n× n二聚体吸附原子层错（DAS）畴的动态生长步骤。结果表明，n× nDAS畴的生长和湮灭都是以一个n× n层错半胞为构筑单元进行的。在450 ℃以上淬火表面上，不仅观察到7× 7，而且观察到9× 9DAS畴逐渐扩展。每种类型的n× nDAS畴的生长都伴随着单个SF半胞向n× nDAS畴侧的连续添加。7× 7和11× 11 SF半电池向9× 9 SF半电池的结构转变发生在9× 9畴侧，以在淬火Si（111）表面上形成大的9× 9 DAS畴。
Dynamic growth steps of Si (111)-n× n dimer–adatom–stacking-fault (DAS) domains in the 1× 1 matrix have been investigated on quenched Si (111) surfaces, with high-temperature scanning tunneling microscopy. It has been found that both growth and annihilation of n× n DAS domains occur with a single n× n stacking-fault (SF) half cell as the building unit. Not only 7× 7, but also 9× 9 DAS domains have been observed to gradually expand on the quenched surface above 450 C. Every type of n× n DAS domains grows with a successive addition of single SF half cells to a n× n DAS domain side. Structural transformation of 7× 7 and 11× 11 SF half cells into 9× 9 SF half cells occurs at a 9× 9 domain side, to form a large 9× 9 DAS domain on the quenched Si (111) surface.© 1996 The American Physical Society.