Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
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由高纯度和优化添加剂形成的纳米结构控制的极低电阻率铜线
DOI：
10.1109/jeds.2018.2808494
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发表时间：
2018
影响因子：
2.3
通讯作者：
Ikeda Shuji
中科院分区：
文献类型：
--
作者：
Onuki Jin;Tamahashi Kunihiro;Inami Takashi;Nagano Takatoshi;Sasajima Yasushi;Ikeda Shuji
提高纳米级铜线的电阻率正成为高速超大规模集成电路的一个关键问题。建立了利用超高纯9N电解液和优化添加剂控制铜丝纳米结构的制造新工艺，实现了实际使用的铜丝比传统工艺生产的铜丝的电阻率降低50%。通过STEM分析和相场模拟，确定了获得极低电阻率铜丝的原因。
Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires.