Charge diffusion effects in CCD X-ray detectors. I. Theory.
Charge diffusion effects in CCD X-ray detectors. I. Theory.
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DOI：
10.1016/0167-5087(83)90509-4
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发表时间：
1983-11
期刊：
影响因子：
--
通讯作者：
G. Hopkinson
中科院分区：
文献类型：
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作者：
G. Hopkinson
分析了电荷扩散对CCDX射线探测器用于单光子计数时性能的影响。结果发现，如果耗尽层下面的无场区域的厚度与少数载流子扩散长度(通常为50-100微米)相当，则这种探测器的能量分辨率会严重降低，并且只有当该厚度实质上小于耗尽区的深度(在目前可用的器件中通常是成比例的7微米)时，才能获得令人满意的性能。外延器件的公式特别简单，使得脉冲高度谱的预测变得直接。这一分析还与随机存取存储器中软错误率(SERS)的计算有关，与将电荷耦合器件用作电离粒子探测器以及在可见光天文学下对电荷耦合器件中宇宙线事件的区分有关。
An analysis is presented of the effect of charge diffusion on the performance of CCD X-ray detectors when used for single photon counting. It is found that the energy resolution of such detectors can be severely degraded if the thickness of the field-free region below the depletion layer is comparable to the minority carrier diffusion length (typically 50-100 ..mu..m) and that satisfactory performance can only be achieved if this thickness is substantially less than the depth of the depletion region (normally proportional7 ..mu..m in presently available devices). The formulae for epitaxial devices are particularly simple, making prediction of pulse height spectra straightforward. The analysis is also relevant to the calculation of soft error rates (SERs) in random access memories, to the use of CCDs as detectors of ionising particles and to the discrimination of cosmic ray events in CCDs under for visible astronomy.