Nanoscale epitaxial growth of GaN on freestanding circular GaN grating
Nanoscale epitaxial growth of GaN on freestanding circular GaN grating
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DOI：
10.1109/omems.2010.5672132
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发表时间：
2010-12
期刊：
影响因子：
--
通讯作者：
Yongjin Wang;F. Hu;K. Hane
中科院分区：
文献类型：
--
作者：
Yongjin Wang;F. Hu;K. Hane
在硅基GaN衬底上制作了独立的圆形GaN光栅，随后通过分子束外延生长在所制备的GaN模板上进行GaN的外延生长。在环形GaN光栅的辅助下，改善了表面扩散，从而发生GaN的选择性生长。利用自组织横向刻面生长了InGaN/GaN多量子威尔斯阱外延圆光栅，并展示了良好的光致发光性能。本工作提供了一种可行的方法来生产集成GaN-Si器件的快速原子束刻蚀GaN，硅微加工和GaN外延生长相结合。
Freestanding circular GaN gratings are fabricated on a GaN-on-silicon substrate, and epitaxial growth of GaN is subsequently conducted on the prepared GaN template by molecular beam epitaxy growth. With the assistance of circular GaN gratings, the surface diffusion is improved and thus, the selective growth of GaN takes place. Epitaxial circular gratings with InGaN/GaN multiple quantum wells are generated with self-organized lateral facets and demonstrate the promising photoluminescence performances. This work provides a feasible approach to produce integrated GaN-Si devices by a combination of fast atom beam etching of GaN, silicon micromachining and epitaxial growth of GaN.