Studies on interface of Cu/Al and Al/SiO2/Si☆
Studies on interface of Cu/Al and Al/SiO2/Si☆
复制标题
Cu/Al和Al/SiO2/Si界面研究☆
DOI：
10.1016/j.proeng.2015.09.220
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Kishida
中科院分区：
文献类型：
--
作者：
Y. Irie;Hiromi Tanaka;K. Kinoshita;S. Kishida
我们分别通过在Al金属上溅射Cu和在SiO2/Si金属上溅射Al制备了Cu/Al和Al/SiO2/Si样品。利用XPS （x射线光电子能谱）研究了Cu膜与Al金属或Al膜与SiO2/Si之间的界面。结果表明，Cu金属在Cu/Al样品中被氧化，转变为Cu+和Cu2+。此外，Cu/Al中的Cu金属厚度和Al/SiO2/Si中的Al金属厚度被认为小于100 Å。同时，溅射法制备的Cu膜比冷轧法制备的Al膜更容易被氧化。Al/SiO2/Si样品的XPS结果表明，Al/SiO2/Si样品的Ar+蚀刻表面可能存在氧还原Al2O3-xlayer， Al/SiO2/Si样品的Ar+蚀刻表面存在不均匀的SiO2- xlayer。
We prepared Cu/Al and Al/SiO2/Si samples by sputtering Cu on Al metals and Al on SiO2/Si, respectively. We investigated the interfaces between Cu film and Al metal, or between Al film and SiO2/Si by XPS (X-ray photoelectron spectroscopy). From the results, we found that Cu metals were oxidized in the Cu/Al samples and changed to Cu+and Cu2+. In addition, the thickness of Cu metal in Cu/Al and Al metal in Al/SiO2/Si are thought to be less than 100 Å. At the same time, the Cu film deposited by a sputtering method may be oxidized more than the Al metal, which is prepared by the method of cold rolling. The XPS results of Al/SiO2/Si samples indicate that there may be oxygen-reduced Al2O3-xlayer on the interface between Al and SiO2, and that there are inhomogeneous SiO2-xin the Ar+etched surface of the Al/SiO2/Si sample.