Charge transport and Hall effect in rubrene single-crystal transistors under high pressure
Charge transport and Hall effect in rubrene single-crystal transistors under high pressure
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DOI：
10.1103/physrevb.84.245308
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发表时间：
2011-12-14
影响因子：
3.7
通讯作者：
Takeya, J.
中科院分区：
文献类型：
--
作者：
Okada, Y.;Sakai, K.;Takeya, J.
测量了高迁移率红荧烯单晶场效应晶体管的四端电导率和霍尔系数随栅电场和外部静水压力的变化。直接从测量的霍尔系数估计电荷密度，而不管栅极电介质层中的收缩，提取迁移率的真正压力依赖性。事实证明，增强的分子间电荷转移导致带状电荷载流子的迁移率增加20%GPa至600 MPa，这通常比无机半导体大一个数量级。我们还发现负压力系数的流动性高于600 MPa，这表明，外部流体静力学力导致额外的分子位移，由于特定的分子形状。
Four-terminal conductivity and Hall coefficient are measured in high-mobility rubrene single-crystal field-effect transistors as functions of gate electric field and external hydrostatic pressure up to 900 MPa. Estimating charge density directly from the measured Hall coefficient regardless of contraction in the gate dielectric layer, genuine pressure dependence of the mobility is extracted. It turned out that enhanced intermolecular charge transfer causes an increase in the mobility of the bandlike charge carriers by 20% GPa up to 600 MPa, which is typically one order of magnitude larger than that in inorganic semiconductors. We also found negative pressure coefficient for the mobility above 600 MPa, suggesting that the external hydrostatic force causes additional molecular displacement due to a specific molecular shape.