Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
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MoS2/WSe2 异质结晶体管的传输特性及其应用潜力
DOI：
10.1021/acs.nanolett.5b04791
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发表时间：
2016-02-01
期刊：
影响因子：
10.8
通讯作者：
Palacios, Tomas
中科院分区：
文献类型：
--
作者：
Nourbakhsh, Amirhasan;Zubair, Ahmad;Palacios, Tomas
本文研究了货车德瓦尔斯MoS 2/WSe 2异质结的横向和横向带间隧穿。我们观察到室温下的负微分电阻（NDR）在异质结二极管组成的几层WSe 2堆叠在多层二硫化钼。NDR的存在归因于在MoS 2/WSe 2异质结的边缘处的横向带-带隧穿。反向隧穿二极管的平均电导斜率为75 mV/dec，具有62 V-1的高曲率系数。与隧道二极管特性相关联，在MoS 2/WSe 2异质结晶体管中观察到正到负的反电势。这种转变是由膜层间强的层间耦合引起的，这导致了电荷密度和能带调制。符号的变化是特别有用的多值逻辑（MVL）电路，因此，我们提出并证明了第一次的MVL反相器，显示三个层次的逻辑使用一对p型晶体管。
This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe2 stacked on multilayer MoS2. The presence of NDR is attributed to the lateral band-to-band tunneling at the edge of the MoS2/WSe2 heterojunction. The backward tunneling diode shows an average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V-1. Associated with the tunnel-diode characteristics, a positive-to-negative transconductance in the MoS2/WSe2 heterojunction transistors is observed. The transition is induced by strong interlayer coupling between the films, which results in charge density and energy band modulation. The sign change in transconductance is particularly useful for multivalued logic (MVL) circuits, and we therefore propose and demonstrate for the first time an MVL-inverter that shows three levels of logic-using one pair of p-type transistors.