Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation
Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation
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DOI：
10.1149/1.3147248
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发表时间：
2009-01-01
影响因子：
3.9
通讯作者：
Ashburn, P.
中科院分区：
文献类型：
--
作者：
Uchino, T.;Ayre, G. N.;Ashburn, P.
本文提出了一种用于单壁碳纳米管（SWNT）化学气相沉积的互补金属氧化物半导体兼容方法。该方法利用 Ge 注入 SiO2 层来形成 Ge 纳米晶体，然后用于生产 SWNT。原子力显微镜和扫描电子显微镜分析的结果表明，Ge 注入提供了对颗粒尺寸的良好控制，并提供了良好控制的 SWNT 生长过程。从Ge纳米晶体获得的SWNT面积密度为长度为4.1+/-1.2μm/μm(2)，与用于制造SWNT场效应晶体管的基于金属催化剂的方法获得的面积密度相当。 Ge 纳米晶体形成后的碳注入显着增强了单壁碳纳米管生长的工艺操作窗口并增加了面密度。
This paper presents a complementary metal oxide semiconductor compatible method for the chemical vapor deposition of single-walled carbon nanotubes (SWNTs). The method uses Ge implantation into a SiO2 layer to create Ge nanocrystals, which are then used to produce SWNTs. The results of atomic force microscopy and scanning electron microscopy analyses indicate that Ge implantation provides good control of particle size and delivers a well-controlled SWNT growth process. The SWNT area density of 4.1 +/- 1.2 mu m in length/mu m(2) obtained from the Ge nanocrystals is comparable to that obtained from metal-catalyst-based methods used to fabricate SWNT field-effect transistors. A carbon implantation after Ge nanocrystal formation significantly enhances the process operating window for the growth of the SWNTs and increases the area density.