Failure Analysis of Electrostatic Discharge and Electrical Overstress Failures of GaAs MMIC
Failure Analysis of Electrostatic Discharge and Electrical Overstress Failures of GaAs MMIC
复制标题
GaAs MMIC静电放电和电过应力失效分析
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Michael Pecht Calce
中科院分区：
文献类型：
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作者：
Yuchul Hwang;Mikyoung Lee;Michael Pecht Calce
对失效的线性GaAsMMIC压变吸收衰减器进行了失效模式和效应分析、外观检查、电学测试、X射线观察、光学显微镜和扫描电镜观察。人体模型静电放电测试和电气过应力测试进行复制的失败。研究表明，故障的位置和损坏的形状不同，这取决于故障是如何复制的。对模拟故障与现场故障的故障分析结果进行了比较。从现场故障和重复测试的损坏程度及其形状来看，现场故障似乎是由ESD应力引起的。
Failure mode and effect analysis , visual inspection, electrical tests, X-ray observation, optical microscopy and scanning electron microscopy were performed on failed linear GaAs MMIC voltage variable absorptive attenuators. Human body model electrostatic discharge tests and electrical overstress tests were performed to replicate the failures. The studies showed that the failure locations and damage shapes varied depending upon how the failures were replicated. Failure analysis results between the replicated failures and the field failures were compared. From the extent of damage and its shape on the field failure and replicate tests, it appears that field failure was caused by ESD stresses.