Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations
Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations
复制标题
用于低温模拟的具有场相关电离能的校准硅迁移率和不完全电离模型
DOI：
10.23919/sispad49475.2020.9241599
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
H. Wong
中科院分区：
文献类型：
--
作者：
H. Wong
在77K和4.2K之间工作的低温硅CMOS在高速服务器应用和量子计算机的外围设备中越来越受欢迎。在低温区，掺杂剂的不完全电离和场增强电离成为主要的物理现象。因此，在低温TCAD模拟中使用准确且校准良好的迁移率和不完全电离模型是很重要的。在本文中，我们提出了一个飞利浦统一迁移率模型（EMOB）和Altermatt的不完全电离模型校准之间的300 K和20 K的硼和砷掺杂剂在硅跨越5个数量级的掺杂浓度。提出了一种新的方法，包括场依赖的电离能在Altermatt的模型，这导致良好的收敛，即使在3D TCAD模拟在4K。
Cryogenic silicon CMOS operating between 77K and 4.2K is becoming more popular in high-speed server applications and the periphery of quantum computers. In the cryogenic regime, dopant incomplete ionization and field enhanced ionization become dominating physical phenomena. Therefore, it is important to use accurate and well-calibrated mobility and incomplete ionization models in cryogenic TCAD simulations. In this paper, we present a Philips Unified Mobility Model (PhuMob) and Altermatt’s incomplete ionization model calibrated between 300K and 20K for boron and arsenic dopants in silicon across 5 orders of magnitude in doping concentration. A novel method is proposed to include field-dependent ionization energy in Altermatt’s model, which results in good convergence even in 3D TCAD simulations at 4K.