Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition
Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition
复制标题
载气流量在改良化学气相沉积单层 MoS2 生长中的作用
DOI：
10.1007/s12274-016-1323-3
复制
发表时间：
2017-02-01
期刊：
影响因子：
9.9
通讯作者：
Bao, Xinhe
中科院分区：
文献类型：
--
作者：
Liu, Hengchang;Zhu, Yuanhu;Bao, Xinhe
单层二硫化钼（MoS2）由于具有多种潜在的应用前景而备受关注。然而，控制其增长仍然是一个巨大的挑战。在这里，我们报告了一种改进的化学气相沉积方法来生长单层二硫化钼。我们观察到，在加热阶段调节载气流量可以大大提高MoS2晶体的质量。这种细微的修饰防止了前驱体之间的不可控反应，这是高质量MoS2单层生长的关键因素。在优化气流量的基础上，通过调节生长时间来控制二硫化钼的覆盖率和鳞片尺寸。
Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time.