High mobility p-channel HFETs using strained Sb-based materials
High mobility p-channel HFETs using strained Sb-based materials
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DOI：
10.1049/el:20071305
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发表时间：
2007-07
影响因子：
1.1
通讯作者：
J. B. Boos;B. R. Bennett;N. Papanicolaou;M. Ancona;J. Champlain;R. Bass;B. V. Shanabrook
中科院分区：
文献类型：
--
作者：
J. B. Boos;B. R. Bennett;N. Papanicolaou;M. Ancona;J. Champlain;R. Bass;B. V. Shanabrook
采用InAlSb/AlGaSb势垒和应变In 0.41 Ga 0.59 Sb量子阱通道制备了栅极长度为0.25 μ m的p沟道hfet。调制掺杂材料的霍尔迁移率为1020 cm 2 /Vs，片密度为1.6 x 10 12 cm -2。该器件的最大直流跨导为133 mS/mm， ft和fmax分别为15 GHz和27 GHz。这些数值是迄今为止报道的该材料系统的最高数值。
Antimonide-based p-channel HFETs with a 0.25 mum gate length have been fabricated with an InAlSb/AlGaSb barrier and a strained In 0.41 Ga 0.59 Sb quantum well channel. The modulation-doped material exhibits a Hall mobility of 1020 cm 2 /Vs and a sheet density of 1.6 x 10 12 cm -2 . The devices have a maximum DC transconductance of 133 mS/mm and an f T and f max of 15 and 27 GHz, respectively. These values are the highest reported to date for this material system.