Scintillation characteristics on anthracene-doped naphthalene crystal for 137Cs-γ ray source
Scintillation characteristics on anthracene-doped naphthalene crystal for 137Cs-γ ray source
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DOI：
10.1016/j.nima.2006.08.035
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发表时间：
2006-12-01
影响因子：
1.4
通讯作者：
Ramasamy, P.
中科院分区：
文献类型：
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作者：
Balamurugan, N.;Arulchakkaravarthi, A.;Ramasamy, P.
在这篇文章中，我们报道了掺菲(NA)晶体的闪烁特性。这种闪烁体的晶体是用布里奇曼法生长的。Na晶体的发射峰位于425 nm处。NA晶体的发光强度是纯萘晶体的3倍。当掺入菲时，具有较高的光输出和较快的主衰减常数(<；30 ns)。对于662 keV伽马射线(Cs-137源)，与光电倍增管耦合的NA晶体在室温下记录到了18%(半高宽)的能量分辨率。NA的脉冲宽度比纯的萘晶体大10倍。与反式二苯乙烯检测器相比，NA检测器具有更好的计时性能。(C)2006爱思唯尔B.V.保留所有权利。
In this paper, we report scintillation characterizations on anthracene-doped naphthalene (NA) crystal. Crystals of this scintillator have been grown using the Bridgman-growth process. The peak of NA crystal emission is at 425 nm. The luminescence intensity of the NA crystal is 3 times that of pure naphthalene crystal. Naphthalene when doped with anthracene has high light output and fast principal decay constant (< 30 ns). For 662 keV gamma rays (Cs-137 source), energy resolution of 18% (FWHM) has been recorded at room temperature for NA crystals coupled to a photomultiplier. The pulse height of NA is 10 times greater than the pure naphthalene crystal. The NA detector exhibited a good timing performance compared to trans-stilbene detector. (c) 2006 Elsevier B.V. All rights reserved.