Microwave heating behaviors of Si substrate materials in a single-mode cavity
Microwave heating behaviors of Si substrate materials in a single-mode cavity
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DOI：
10.1016/j.matchemphys.2010.08.004
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发表时间：
2010-12-01
影响因子：
4.6
通讯作者：
Taniguchi, Shoji
中科院分区：
文献类型：
--
作者：
Cao, Ziping;Yoshikawa, Noboru;Taniguchi, Shoji
研究了硅衬底材料在H场和E场中的微波加热行为，根据加热速率的不同，H场中的温度曲线可分为三个阶段，而E场中的温度曲线可分为两个阶段。随着硅板厚度的增加，H场和E场中的加热效率逐渐降低。硅中的硼掺杂也对加热行为有明显的影响，导致加热曲线中的最高温度降低。相比之下，在硅板上沉积薄薄的Au层可以显着提高所有样品在H场中的加热效率，尽管使用较高的微波功率来加热E场的最大值同一样品在E最大加热时的温度低于在H最大加热时的温度，证实了对于高电导率的样品，H场的加热比E场的加热更有效，而对于低导电性的样品，相反的E场加热更好。(C)2010 Elsevier B V版权所有
Microwave heating behaviors of Si substrate materials were investigated in both H and E field The temperature curves could be divided into three stages in H field but two stages in E field according to the changing heating rate With the increase of the Si plate thickness the heating efficiency gradually decreases in both H and E field The boron doping in Si has also an evident influence on the heating behaviors and leads to the reduction of the maximal temperature in the heating curve By contrast a thin Au layer deposited on the Si plate can significantly promote the heating efficiency in H field For all samples although higher microwave power is used for E field heating the maximal temperature of the same sample heated at the E maximum was lower than that at the H maximum confirming that the heating of H field is more effective than that of E field for a high electric conductive sample and reversely E field heating is more superior for a low conductive one (c) 2010 Elsevier B V All rights reserved