Dx centers-donors in AlGaAs and related compounds
Dx centers-donors in AlGaAs and related compounds
复制标题
AlGaAs 及相关化合物的 Dx 中心捐赠者
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
E. Merino
中科院分区：
文献类型：
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作者：
E. Merino
基于从头算总能量计算的DX深施主态的理论模型，Harald Overhof DX微观结构和A1 Ga 1-xAs的性质-来自结构敏感实验的贡献，Johann-Martin Spaeth和Matthias Linde DX中心对A1 GaAs电性能的影响，邓肯莫德和让克劳德门深能级瞬态光谱DX中心恩里克Calleja和伊格纳西奥Izpura光致发光性能的恩里克Calleja和伊格纳西奥Izpura（A1，Ga）As合金和GaAs在压力下的DX中心研究框架，Mathieu Leroux DX中心在其他III-V合金，皮埃尔Gibart最小化DX中心效应在A1 GaAs基设备，埃利亚斯Munoz和恩里克Calleja DX中心-理论预测和实验结果的比较，汉斯Juergen冯Bardeleben。
Theoretical models for DX deep donor states based on ab-initio total energy calculations, Harald Overhof DX microstructure and nature in A1Ga1-xAs - contributions from structure-sensitive experiments, Johann-Martin Spaeth and Matthias Linde impact of the DX centers on the electrical properties of A1GaAs, Duncan Maude and Jean Claude Portal deep-level transient spectroscopy of DX centers Enrique Calleja and Ignacio Izpura photoluminescence properties of (A1,Ga)As alloys and GaAs under pressure in the framework of DX center studies, Mathieu Leroux DX centers in other III-V alloys, Pierre Gibart minimizing DX center effects in A1GaAs-based devices, Elias Munoz and Enrique Calleja the DX centers - a comparison of theoretical predictions and experimental results, Hans Juergen von Bardeleben.