Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm
Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm
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DOI：
10.1063/1.1461429
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发表时间：
2002-03-18
影响因子：
4
通讯作者：
Künzel, H
中科院分区：
文献类型：
--
作者：
Biermann, K;Nickel, D;Künzel, H
利用飞秒铒光纤激光器对低温生长的GaInAs/AlInAs多量子威尔斯阱的超快光响应进行了泵浦-探测实验研究。用铍掺杂的生长样品（浓度为8 × 10（17）cm（-3））显示出非线性的透射变化，其通过载流子捕获以230 fs的时间常数衰减。实验表明，由1.5 ps的超短脉冲对分离的传输和非常小的积累效应的快速调制，使这种材料非常有前途的全光开关。在退火，Be掺杂的样品和未掺杂的样品中发现了相当长的恢复时间。(C)2002年美国物理学会。
The ultrafast optical response of low-temperature-grown GaInAs/AlInAs multiple quantum wells is studied in pump-probe experiments with a femtosecond Er:fiber laser. As-grown samples doped with beryllium (concentration of 8x10(17) cm(-3)) display a nonlinear transmission change, which decays by carrier trapping with a time constant of 230 fs. Experiments with pairs of ultrashort pulses separated by 1.5 ps demonstrate a fast modulation of transmission and very small accumulation effects, making this material highly promising for all-optical switching. Substantially longer recovery times are found in annealed, Be-doped samples and in undoped samples. (C) 2002 American Institute of Physics.