Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations
Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations
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DOI：
10.1063/1.3409121
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发表时间：
2010-04-12
影响因子：
4
通讯作者：
Yamaguchi, A. Atsushi
中科院分区：
文献类型：
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作者：
Yamaguchi, A. Atsushi
利用6x6k中心点p哈密顿量数值计算了不同取向AlN衬底上富al AlGaN薄量子阱的光偏振特性。计算结果表明，在c平面基底上的量子阱中，当Al成分接近0.76时，优势偏振方向突然从平面内方向切换到c轴方向。由于价带混合效应，基底的微小倾角会使极化特性发生剧烈变化。研究发现，邻近基板以及半极性和非极性基板的使用都有利于提高光学器件的性能。
The optical polarization properties of Al-rich AlGaN thin quantum wells on AlN substrates with various substrate orientations are numerically calculated using a 6x6 k center dot p Hamiltonian. The calculation results show that the predominant polarization direction abruptly switches from the in-plane direction to the c-axis direction at an Al composition of similar to 0.76 in quantum wells on c-plane substrates. It is also shown that the polarization characteristics drastically change by small inclination of the substrates due to valence band mixing effects. It is found that the use of the vicinal substrates as well as semipolar and nonpolar substrates could be beneficial in improving optical device performance.